View IRLI530NPBF_775107.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRLI530NPBF
Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l
PD - 95635
HEXFET(R) Power MOSFET
D
VDSS = 100V RDS(on) = 0.10
G S
ID = 12A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
TO-220 FULLP AK
Absolute Maximum Ratings
Max.
12 8.6 60 41 0.27 16 150 9.0 4.1 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.

Max.
3.7 65
Units
C/W
www.irf.com
1
07/23/04
IRLI530NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Min. 100 1.0 7.7
Typ. 0.122 7.2 53 30 26
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.100 VGS = 10V, ID = 9.0A 0.120 VGS = 5.0V, I D = 9.0A 0.150 VGS = 4.0V, I D = 8.0A 2.0 V VDS = VGS , ID = 250A S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, V GS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 34 ID = 9.0A 4.8 nC VDS = 80V 20 VGS = 5.0V, See Fig. 6 and 13 VDD = 50V ID = 9.0A ns RG = 6.0, VGS = 5.0V RD = 5.5, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 800 VGS = 0V 160 VDS = 25V pF 90 = 1.0MHz, See Fig. 5 12 = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 12 showing the A G integral reverse 60 p-n junction diode. S 1.3 V TJ = 25C, IS = 6.6A, V GS = 0V 140 210 ns TJ = 25C, IF = 9.0A 740 1100 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 3.1mH RG = 25, IAS = 9.0A. (See Figure 12) ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, T J 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRL530N data and test conditions
2
www.irf.com
IRLI530NPBF
100
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
10
2.5V
1
1
2.5V 20s PULSE WIDTH T J = 25C
1 10
0.1 0.1
A
100
0.1 0.1
20s PULSE WIDTH T J = 175C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
3.0
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 175C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 15A
2.5
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS = 50V 20s PULSE WIDTH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRLI530NPBF
1400
1200
C, Capacitance (pF)
1000
Ciss
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
15
I D = 9.0A V DS = 80V V DS = 50V V DS = 20V
12
800
9
600
Coss
400
6
Crss
200
3
0 1 10 100
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175C
I D , Drain Current (A)
100
10
TJ = 25C
10s
10
100s
1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
1.4
1 1
TC = 25C TJ = 175C Single Pulse
10
1ms 10ms 100
A
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRLI530NPBF
12
V DS VGS
RD
ID , Drain Current (A)
9
RG 5.0V
D.U.T.
+
-VDD
6
Pulse Width 1 s Duty Factor 0.1 %
3
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLI530NPBF
EAS , Single Pulse Avalanche Energy (mJ)
350
TOP
300
15V
BOTTOM
250
ID 3.7A 6.4A 9.0A
VDS
L
DRIVER
200
RG
10V
D.U.T
IAS tp
+ V - DD
150
A
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
50
0
VDD = 25V
25 50 75 100 125 150
A
175
V(BR)DSS tp
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRLI530NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRLI530NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
8
www.irf.com

▲Up To Search▲

Price & Availability of IRLI530NPBF

	To Download IRLI530NPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .